...levels near the energy maximum. The most clear-cut situation is shown in Fig. 7. This is the case where the bottom of the conduction band and the top of the valence band are at M = 0. The energy of an electron in the conduction band may be interpreted upon the basis of...

...No. 67-11190 Natural graphite has a band overlap of about 0.035 eV. where the Fermi level lies about midway between the bottom of the conduction band and the top of the valence band. A study has been made on the effect of boron doping of compacted natural graphite (called SP-li on...

...or not an electron can gain from the laser field an energy corresponding at least to the difference between the bottom of the conduction band and the top of the valence band. In the absence of phonon assistance an affirmative answer is by no means obvious. On the contrary,...

...correspondence between the band states at the center of the BZ of (GaAs)m(AlAs)n SL's originating from the bottom of the conduction band and the top of the valence band of bulk GaAs (AlAs). [110] [111] Figure 3 . Possible energy levels and allowed optical transitions...

...representation F15 in the valence band. Accordingly, within the model, the basis wave functions of the bottom of the conduction band and the top of the valence band are chosen in the form of |s>- and |p>-functions (the X axis is perpendicular to the heterobarrier)....

...occurs in the case of Si. 1n such cases, the material is called an indirect gap semiconductor. When the bottom of the conduction band and the top of the valence band occur at the same value of k, it is called a direct gap semiconductor. Direct and indirect gap semiconductors...

...the p-type material (minority carriers). With the Fermi level close to the centre of the band gap, the bottom of the conduction band and the top of the valence band are sufficiently far from the Fermi level to allow use of the Boltzmann approximation for the tail...

...correspondence between the band states at the center of the BZ of (GaAs)m(AlAs)n SL's originating from the bottom of the conduction band and the top of the valence band of bulk GaAs (AlAs). The co-rep T4 -I- FS describes a degenerate state of the (GaAs)m(AlAs)n [1 1 1]...

...exist:26~28 °] = N exp - I n I E (4.9) exp H Ev (4.10) where Ec and Ev denote, respectively, the energy of the bottom of the conduction band and the top of the valence band and EF is the Fermi energy level, which is a parameter in the Fermi-Dirac statistics: ) = {l+exp(E,-EF)/kT}~...

...hole transitions from E < Ev to hole traps at EDp > E > Ev are also nonradiative. Here, Ec and Ev are the bottom of the conduction band and the top of the valence band, respectively. (d) Transitions of free electrons from E > Ec to trapped hole recombination sites at...