Fundamentals of Microelectronics Processing

activation approximately Assume atoms beam becomes Calculate carrier charge chemical circuit coefficient concentration conductivity considered constant corresponding crystal defects defined density dependent deposition desired determined device diffusion direction distribution dopant doping effect electric electrons energy epitaxial equations equilibrium etching Example field FIGURE flow follows given growth heat higher holes impurities increases interface intrinsic involved junction kinetics lattice layer leads length lithography mass material maximum mean melt metal neutral Note obtained oxide oxygen physical plasma potential pressure problem range reaction reactor region resist respectively semiconductor shown in Fig silicon solid Solution species sputtering steps structure substrate surface Table temperature thermal thickness torr transfer typical uniform unit usually voltage wafer yields York