1973 European Microwave Conference: September 4-7, 1973, Brussels University, Brussels, Belgium. Proceedings. Supported by Fabrimetal in Cooperation with the Convention of National Societies of Electrical Engineers of Western Europe [and Others], Volume 1University of Ghent, Laboratorium voor Elektromagnetisme, 1973 - Microwaves |
From inside the book
Results 1-3 of 85
Page 130
... Fig.5 Gain and noise figure of the amplifier shown in Fig.3 . Limiting values and standard deviation ( shaded ) are from Monte Carlo tolerance analysis HP - 35821E Fig.2 Transmission line topology for the 2 to 4 GHz amplifier Fig.3 Six ...
... Fig.5 Gain and noise figure of the amplifier shown in Fig.3 . Limiting values and standard deviation ( shaded ) are from Monte Carlo tolerance analysis HP - 35821E Fig.2 Transmission line topology for the 2 to 4 GHz amplifier Fig.3 Six ...
Page 161
... shown in Fig . 4. The loss in performance above 80GHz is due to a waveguide resonance between the ridges and may be removed by reducing the ridge separation . The estimated insertion loss for an individual ridge transition is 0.75 dB at ...
... shown in Fig . 4. The loss in performance above 80GHz is due to a waveguide resonance between the ridges and may be removed by reducing the ridge separation . The estimated insertion loss for an individual ridge transition is 0.75 dB at ...
Page 224
... shown in Fig.7 will best approximate the transfer function of the network shown in Fig.6 if ( wo ) = π / 2 From this relation L2 ted . • may be calcula- By utilizing the above given procedure a third degree filter has been designed ...
... shown in Fig.7 will best approximate the transfer function of the network shown in Fig.6 if ( wo ) = π / 2 From this relation L2 ted . • may be calcula- By utilizing the above given procedure a third degree filter has been designed ...
Contents
VOLUME I | |
Solid State circuits I Paper | |
On the design of transferred electron oscillators and A 1 3 | |
5 other sections not shown
Common terms and phrases
amplifier amplitude analysis attenuation avalanche avalanche diode band bandpass bandwidth baritt barrier bias voltage calculated capacitance cavity centre frequency channel characteristic coaxial coefficient components constant coupler coupling current density curves dielectric diffusion doping effect efficiency electric electron epitaxial equation equivalent circuit experimental field FM noise frequency range function GaAs gain group delay Gunn devices Gunn diode IEEE Trans IMPATT diodes impedance increase injection insertion loss layer limit linear load lossless matching matrix maximum method microstrip microstrip lines microwave mode modulator negative resistance noise figure noise measure noise temperature obtained operation optimization optimum oscillator output power parameters passband performance phase shifter PIN diode Proc pulse region resonator Schottky shown in Fig shows silicon small signal structure substrate techniques temperature theoretical theory thickness transformer transistor transit transmission line TRAPATT tuning two-port values varactor VSWR wave waveguide wavelength width X-band