VLSI Fabrication Principles: Silicon and Gallium ArsenideFully updated with the latest technologies, this edition covers thefundamental principles underlying fabrication processes forsemiconductor devices along with integrated circuits made fromsilicon and gallium arsenide. Stresses fabrication criteria forsuch circuits as CMOS, bipolar, MOS, FET, etc. These diversetechnologies are introduced separately and then consolidated intocomplete circuits. An Instructor's Manual presenting detailed solutions to all theproblems in the book is available from the Wiley editorialdepartment. |
Contents
MATERIAL PROPERTIES | 1 |
LITHOGRAPHIC PROCESSES | 10 |
Multiplication | 48 |
Copyright | |
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activation addition amount annealing Appl applications approach arsenic atoms beam behavior bonds boron carrier composition compound concentration Consequently considerably considered crystal defects depending deposition described devices diagram diffusion direction dislocation dopant doping effects Electrochem Electron energy epitaxial extremely fabrication field Figure films follows formation function GaAs gallium given gold grown growth growth rate heat implantation important impurity incorporation increase interface interstitial ion implantation lattice layer liquid lower material mechanism melt metal microcircuit n-type Note obtained occurs operation oxide oxygen phase phosphorus Phys plane possible present pressure problem properties range reaction reactor reduced region relatively resistivity semiconductor shown in Fig shows silicon SiO2 situation slice solid solution species step structure substitutional substrate surface technique temperature thermal thickness tion Typically usually vacancies vapor