Time Resolved Luminescence Measurements of Gallium Arsenide and of Gallium Arsenide Photodetectors |
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Page 4
... AlGaAs layers [ 12 ] using this technique have been published : the extremely high sensitivity in these experiments was achieved through the use of a radio frequency chopping and phase sensitive detection technique . In the course of ...
... AlGaAs layers [ 12 ] using this technique have been published : the extremely high sensitivity in these experiments was achieved through the use of a radio frequency chopping and phase sensitive detection technique . In the course of ...
Page 26
... AlGaAs layer . there Secondly , is an increase in the lifetime with increasing photoexcitation density . Both of these features were commonly observed for the bulk GaAs and GaAs epilayers studied throughout the course of this work ...
... AlGaAs layer . there Secondly , is an increase in the lifetime with increasing photoexcitation density . Both of these features were commonly observed for the bulk GaAs and GaAs epilayers studied throughout the course of this work ...
Page 27
Ann Christine Von Lehmen. samples , or of of material quality in samples capped AlGaAs layer transparent to the laser wavelength . case , short lifetime s and strong density with an In this dependence indicate the presence of large ...
Ann Christine Von Lehmen. samples , or of of material quality in samples capped AlGaAs layer transparent to the laser wavelength . case , short lifetime s and strong density with an In this dependence indicate the presence of large ...
Common terms and phrases
active layer active region AlGaAs algorithm Appl ASWRIT+ASSAMF Ballantyne band-to-band recombination best fit bias voltage bimolecular broadband calculation CALL OPNPSA('TYPE CALL TNOU INPUT capacitance capacitor carrier population carrier transport Chapter conduction band curve Czochralski described device of Fig DIST(I distribution DLTAT doped doping density dye laser effects electrons and holes electrostatic potential energy equilibrium evaporation experimental experiments Figure FNAME function GaAs GaAs epilayers GaAs samples GALLIUM ARSENIDE high fields hole sweepout inductor inescence laser power Lehmen Lett lifetime lightly doped sample Luminescence decay luminescence measurements luminescence signal Mask Level micron NINCR nonlinearity nonradiative decay Np(t NTOT ohmic contact OLAP perturbation phonon photoconductor photoexcited carrier density photoresist Phys picosecond plot Poisson's equation power law probe created carriers pump pump-probe quasi-Fermi level radiative rate equation resolved measurements scence Schottky diode semiconductor Shorinji Kempo shown in Fig shows simple thesis time-resolved transit VELH velocity voltage drop wafers wavelength