Ion Implantation: Basics to Device FabricationIon implantation offers one of the best examples of a topic that starting from the basic research level has reached the high technology level within the framework of microelectronics. As the major or the unique procedure to selectively dope semiconductor materials for device fabrication, ion implantation takes advantage of the tremendous development of microelectronics and it evolves in a multidisciplinary frame. Physicists, chemists, materials sci entists, processing, device production, device design and ion beam engineers are all involved in this subject. The present monography deals with several aspects of ion implantation. The first chapter covers basic information on the physics of devices together with a brief description of the main trends in the field. The second chapter is devoted to ion im planters, including also high energy apparatus and a description of wafer charging and contaminants. Yield is a quite relevant is sue in the industrial surrounding and must be also discussed in the academic ambient. The slowing down of ions is treated in the third chapter both analytically and by numerical simulation meth ods. Channeling implants are described in some details in view of their relevance at the zero degree implants and of the available industrial parallel beam systems. Damage and its annealing are the key processes in ion implantation. Chapter four and five are dedicated to this extremely important subject. |
Contents
SEMICONDUCTOR DEVICES | 1 |
12 Semiconductor Physics | 6 |
13 pn Junction and Diode | 10 |
14 Unipolar and Bipolar Transistors | 13 |
15 Ion Implantation and Semiconductor Devices | 19 |
16 Damage and Yield | 25 |
17 Future Trends | 27 |
ION IMPLANTERS | 33 |
52 Solid Phase Epitaxial Growth of Amorphous Silicon | 174 |
53 Annealing of LowDose Heavy Ion Implant | 183 |
54 Regrowth of Amorphous Layer Under a Mask | 185 |
55 Annealing of Heavily Disordered Regions | 190 |
56 Rapid Thermal Processing | 197 |
57 Impurity Diffusion During Annealing | 205 |
58 Interaction of Impurities with Ion Implanted Defects | 207 |
59 Defect Engineering | 212 |
22 Ion Sources | 35 |
23 High Energy Implanters | 39 |
24 Magnetic Analyzer and Beam Transport | 45 |
25 Energy Contamination | 51 |
26 Scan System and Current Measurement | 53 |
27 Wafer Cooling | 59 |
28 Wafer Charging | 63 |
29 Uniformity Control and Mapping | 66 |
210 Contaminants and Yield | 72 |
211 Plasma Immersion Ion Implantation | 75 |
RANGE DISTRIBUTION | 79 |
32 Elastic Stopping Power | 81 |
33 Electronic Energy Loss | 87 |
34 Depth Profile of Implanted Ions | 91 |
35 Penetration Anomalies | 99 |
36 Channeling Implants | 102 |
37 Lateral Spreading | 114 |
38 Simulation of Range Distribution | 119 |
RADIATION DAMAGE | 131 |
42 Collision Cascade | 132 |
43 Damage Distribution | 135 |
44 Crystalline Defects | 141 |
45 Primary Defects | 146 |
46 Hot Implants | 152 |
47 Ion Beam Induced Enhanced Crystallization | 163 |
48 Ion Implantation into Localized Si Areas | 171 |
ANNEALING and SECONDARY DEFECTS | 173 |
ANALYTICAL TECHNIQUES | 217 |
62 Secondary Ion Mass Spectronietry | 218 |
One and Two Dimensional Analyses | 226 |
64 Carrier and Mobility Profiles | 236 |
65 Rutherford Backscattering and Channeling Effect | 241 |
66 Transmission Electron Microscopy | 252 |
SILICON BASED DEVICES | 259 |
72 Threshold Voltage Control in MOSFET | 261 |
73 Short Channel Effects | 269 |
74 Shallow Junctions | 273 |
75 Complementary MOS Devices and Technology | 281 |
76 Lifetime Engineering in Power Devices | 287 |
77 High Energy Implant Applications | 293 |
78 HighSpeed Bipolar Transistors | 301 |
ION IMPLANTATION IN COMPOUND SEMICONDUCTOR AND BURIED LAYER SYNTHESIS | 315 |
82 Ion implantation in GaAs | 316 |
83 Ion Implantation in InP | 325 |
84 Isolation of IIIV Semiconductors | 328 |
85 Isolation of Superlattice and Quantum Well Structures | 332 |
86 Synthesis of Buried Dielectric | 333 |
87 Devices in SOI Substrates | 339 |
88 Buried Metal Layer Formation | 343 |
89 Compound Semiconductor Based Devices | 348 |
Selected References | 359 |
References | 361 |
| 379 | |
Other editions - View all
Common terms and phrases
acceleration amorphous layer angle annealing axis backscattering band gap base bipolar transistor boron buried layer carrier channel charge collector collision cascade CONCENTRATION cm³ CoSi2 cross section damage density depends depleted region depth device diffusion dislocation displaced distribution dopant doped drain effect electric field electrons emitter epitaxial extended defects fabrication Figure fluence formation formed GaAs gate growth high dose high energy implants implanted dose impurities increases interface interstitials ion beam ion implantation ionization lattice magnetic mask material measured metal mobility MOSFET n-type nuclear obtained oxide layer oxygen p-n junction parameters particles photoresist point defects polycrystalline polycrystalline silicon polysilicon potential projectile range reduced regrowth reported in Fig sample Schematic secondary defects semiconductor sheet resistance shown in Fig silicide silicon SIMOX single crystal SiO2 species spreading resistance sputtering structure substrate surface target atoms temperature thermal thickness threshold voltage tilt tion wafer yield