CMOSETR 2015 Vol. 3: Microelectronics & Nanotechnology Track: Presentation Slides
CMOS Emerging Technologies Research, May 22, 2015 - 200 pages
Presentation slides for the Microelectronics & Nanotechnology track at CMOSETR 2015, May 20-22, 2015.
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1T-contacted devices 2H-contacted 2H-MoS2/Metal contacts 1T-MoS2/Metal Alamos National Laboratory Artificial Neural NetWork ASTRAN barriers vs Ohmic-like Beam splitter C)+D cell library channel CMOS CMOS Emerging Technologies CMOSETR contact resistance contacts 1T-MoS2/Metal contacts contacts SiO Device level different local photocurrent Electrical properties electronic energy Environmental effects field-effect transistor FET FinFET FPGA Galvo H-TFET Hebbian learning Identifiers and PUFs IEDM III-V Improved field-effect transistor improvement of TMD/metal In1 In2 InAs Ion/Ioff layout compaction low resistance Low-resistance contacts ohmic-like Memristive memristor with voltage metal di-chalcogenides TMDs MoS2/metal contacts N N F F Nanoelectronics Nanowires Neumann Architectures Neuromorphic Neuron Number of Transistors Ohmic-like contact Optoelectronic properties performances Phase transformation Phase-engineering in TMDs Physical Design Physical Unclonable Function Power Reduction Pulickel Ajayan Ryukoku University Schottky barriers Semimetals Side-Channel Attack single-MoS2 layer Conclusion Standard Cell Synapse Synchronous detection TFET TMD/metal contacts tog,n transformation in MoS2 Transition metal di-chalcogenides Tunnel FET Vtog,n switches Vtog,p Write-Time