ETCMOS 2016 Vol.3: Nanotechnology TrackETCMOS CMOS Emerging Technologies Research, May 26, 2016 - 200 pages Presentation slides from the Nantoechnology track at the ETCMOS 2016 conference in Montreal, May 25-27, 2016 |
Common terms and phrases
50 nm Drain Aditive lithography In-situ Algorithm Ambient Room Temperature annealing applications in Nanotechnology Balestra Bandgap Beam Induced deposition Beam Lithography Focused circuit simulation Dark field Bright devices diffusivity Electrical Electromigration Electron Beam Lithography Energy equation ETCMOS F F F fabrication FEBID FIB-SEM Dual Beam FIBID Field-Programmable Gate Array FinFET Fixed FM Focused Beam Induced focused beams Electron Focused Ion Beam FPGA FPGA-Based FCE Free FM Functional G.A. Kouzaev Graphene III-V implantation In-situ transport testing Ion Beam Synthesis Lett Lithography Focused Ion Magnetic Magnetic Tunnel Junctions Measurements & Control MOSFETs msec Muralidharan mV VFB nanocrystals Nanofabrication Nanogap nanomaterial Nanoscale Nanostructuration Nanowires nm 50 nm nm Drain Source nm Source Drain Phys plasmonic Process Purpose OS GPOS Raman Room Temperature VSTEP RTMTJ RTOS Schrödinger equations Single-Electron Transistors SiO2 Spin Filtering Spin Transfer Stencil Subtractive lithography switching TFET Transistors Tulapurkar Tunnel FET Voltage