Principles of Growth and Processing of SemiconductorsA senior/graduate text on the growth and processing of semiconductor materials (semiconductor fabrication) that will expose material/electrical and chemical engineering majors to the principles underlying the fabrication of state-of-the-art integrated circuits and their applications. |
Contents
Principles of Semiconducting Devices | 2 |
4 | 19 |
Junction Transistors 2 2 4 FieldEffect Transistors | 72 |
Copyright | |
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annealing Appl Assuming atoms band gap beam behavior bias bond Burgers vector C₁ calculate carrier concentration cm³ composition conduction band crystal density depletion region deposition device diamond-cubic diffusion coefficient diodes discussed in section dopant dopant atoms doped edge EHPs electric field electromigration electrons energy epitaxial layers Equation equilibrium example Fermi film formation GaAs given growth rate holes III-V impurities interface interstitials ion implantation lattice layers grown levels lithography loops Mahajan mask material melt metal micrograph MOSFETs n-type observed occurs ohmic contacts oxide oxygen p-n junction p-type semiconductor Phys pits planes plasma point defects potential precipitates produce reaction recombination resist resulting Schematic Schottky shown in Figure shows silicon silicon dioxide SiO2 situation solid solution species sputtering stacking faults structure substrate surface technique temperature thermal thickness tion transistor vacancies valence band vapor voltage wafer X-ray