Principles of Growth and Processing of SemiconductorsA senior/graduate text on the growth and processing of semiconductor materials (semiconductor fabrication) that will expose material/electrical and chemical engineering majors to the principles underlying the fabrication of state-of-the-art integrated circuits and their applications. |
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Page 131
... beam passes through a slit S2 and is intercepted by a photographic plate . Only a small por- tion of the crystal is sampled by the X - ray beam . To investigate the whole crystal , the specimen and the plate are rigidly held together ...
... beam passes through a slit S2 and is intercepted by a photographic plate . Only a small por- tion of the crystal is sampled by the X - ray beam . To investigate the whole crystal , the specimen and the plate are rigidly held together ...
Page 411
Subhash Mahajan, K. S. SreeHarsha. ΑΙ Charge Electron Beam Water - Cooled Cu Hearth FIGURE 10.3 Electron - beam evaporation system . An imposed magnetic field deflects the electron beam so that the substrates are protected from the ...
Subhash Mahajan, K. S. SreeHarsha. ΑΙ Charge Electron Beam Water - Cooled Cu Hearth FIGURE 10.3 Electron - beam evaporation system . An imposed magnetic field deflects the electron beam so that the substrates are protected from the ...
Page 468
... beam shapes , such as Gaussian round beams , fixed - shape beam configurations and variable - shape aper- ture beams . The electrons emitted from a source have an energy distribution that depends on the temperature of the source . The ...
... beam shapes , such as Gaussian round beams , fixed - shape beam configurations and variable - shape aper- ture beams . The electrons emitted from a source have an energy distribution that depends on the temperature of the source . The ...
Contents
An Introduction | 1 |
Principles of Semiconducting Devices | 2 |
5 | 22 |
Copyright | |
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Common terms and phrases
annealing Appl Assuming atoms band gap beam behavior bias bond Burgers vector C₁ calculate carrier concentration cm³ composition conduction band crystal density depletion region deposition device diamond-cubic diffusion coefficient diodes discussed in section dopant dopant atoms doped edge EHPs electric field electromigration electrons epitaxial layers Equation equilibrium etch rate example Fermi film formation GaAs given growth rate holes III-V impurities interface interstitials ion implantation lattice layers grown lithography loops Mahajan mask material melt metal micrograph MOSFETs n-type observed occurs ohmic contacts orientation oxide oxygen p-n junction p-type semiconductor Phys pits planes plasma point defects potential precipitates produce reaction recombination resist resulting Schematic Schottky shown in Figure shows silicon silicon dioxide SiO2 situation solid solution species sputtering stacking faults substrate surface technique temperature thermal thickness tion transistor vacancies valence band values vapor voltage wafer X-ray