VLSI fabrication principles: silicon and gallium arsenide

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Wiley, Feb 23, 1983 - Technology & Engineering - 665 pages
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Fully updated with the latest technologies, this edition covers the fundamental principles underlying fabrication processes for semiconductor devices along with integrated circuits made from silicon and gallium arsenide. Stresses fabrication criteria for such circuits as CMOS, bipolar, MOS, FET, etc. These diverse technologies are introduced separately and then consolidated into complete circuits. An Instructor's Manual presenting detailed solutions to all the problems in the book is available from the Wiley editorial department.

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good questions at the back. Read full review

Contents

Material
2
Phase Di
50
Crystal Growth
82
Copyright

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