CMOSETR 2015 Vol. 6: Materials Track: Presentation Slides

3D contact 3DVLSI enabling technology Annealed As-grown Base Wafer Berry curvature Buried Oxide Carbon CMOS CMOS/CMOS constraint CoolCubeTM density Depth angstrom detection dislocation Donor Wafer Dopant doping 𝐄 effective mass Electron ELTRAN epitaxy exciton fin/wire FinFET FTIR G e f germanide graphene Hall effect heterobilayers High mobility channels IEEE III-V stage immobilization InGaAs interconnect junction Kadoya laser LEDoS low-k Molle Monolithic 3D Moore’s Law MOSFET MQW MQW p-GaN MQW p-GaN p-GaN n-III-V Nanowire NEMS/CMOS node Nonlinear valley current OPTIMIZATION Oxide-oxide bond partial strain Photon pixel plasma PNP HBT polarized probe DNA Qualcomm Resist Sapphire substrate scaling Sequential integration challenges Si-Ge interdiffusivity modeling SI/SI SiGe SiGe:C Silicon SIMS Simulation Strain relaxation Stratum Stratum 2 Stratum structure substrate target DNA Temperature Terahertz Time-Domain Spectroscopy thermal Topic Transferred Layer Stratum transistor transition metal dichalcogenides Valley Hall effect VLSI Z. J. Liu