Fundamentals of Microelectronics Processing |
Contents
Silicon Refining and Other Raw Materials | 53 |
Bulk Crystal Growth | 74 |
Electrical Characteristics of Processed Materials | 108 |
Copyright | |
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activation energy adsorption adspecies annealing atoms beam C₁ Calculate carrier chemical chlorosilanes circuit coefficient collisions Crystal Growth defects defined deposition rate determined device diffusion distribution dopant dopant concentration doping effect electric field Electrochem electrons epitaxial equations equilibrium etching Example fabrication FIGURE film flow flux follows GaAs gallium arsenide gas phase given by Eq growth rate H₂ heat holes impurities integrated circuits interface ion energy ion implantation junction lattice layer length LPCVD LPCVD reactor mask mass transfer material maximum mean free path melt metal molecular molecule MOSFET n-type n-type semiconductor oxide oxygen Phys rate constant reaction reactive region resist semiconductor sheath shown in Fig SiCl4 silane silicon silicon dioxide SiO2 solid Solution source species sputtering Streetman substrate susceptor temperature thermal thickness tion torr typical uniform valence band vapor velocity voltage wafer yields