GaAs FET Principles and TechnologyJames V. DiLorenzo, Deen D. Khandelwal |
Contents
P F Lindquist and W M Ford | 3 |
Vapor Phase Epitaxy for GaAs FETs | 67 |
Molecular Beam Epitaxy for Microwave Field Effect Transistors | 101 |
Copyright | |
3 other sections not shown
Common terms and phrases
acceptor achieved active layer amplifier annealing bond wire buffer layer burnout capacitance channel chip cm³ crystal dB gain DCFL density device dielectric diode donor drain bias E/D FET effect electrical Electron Equation etching fabrication failure flip-chip frequency GaAs FET Gallium Arsenide gate length gate voltage gate width growth IEEE IEEE Trans impedance matching impurity increase input power integrated circuits interconnect interface ion implantation Lett limited load logic low noise matching network material measured MESFET micron microstrip Microwave Microwave Theory mobility n-type noise figure ohmic contact operation oscillator output power parameters performance Phys pinch-off planar power dissipation power FET power GaAs FETs profiles region resistance S-parameters saturation Schottky barrier Schottky diode SDFL semi-insulating GaAs semiconductor shown in Figure signal silicon structure surface switching Tech techniques temperature thermal thickness threshold voltage tion transistor values VLSI wafer